| HOU Huanran,JIN Yangli,SHI Xiaofei,ZHANG Yunsheng,WANG Yanhang,ZU Chengkui.Effect of ITO Deposition Temperature on Photoelectric Properties of ITO/Au Transparent Conductive Films[J],54(4):233-241, 261 |
| Effect of ITO Deposition Temperature on Photoelectric Properties of ITO/Au Transparent Conductive Films |
| Received:March 21, 2024 Revised:April 27, 2024 |
| View Full Text View/Add Comment Download reader |
| DOI：10.16490/j.cnki.issn.1001-3660.2025.04.019 |
| KeyWord:deposition temperature indium tin oxide ultra-thin gold film transparent conductive film magnetron sputtering photoelectric property surface free energy |
| Author | Institution |
| HOU Huanran |
China Building Materials Academy, Beijing , China |
| JIN Yangli |
China Building Materials Academy, Beijing , China |
| SHI Xiaofei |
China Building Materials Academy, Beijing , China |
| ZHANG Yunsheng |
China Building Materials Academy, Beijing , China |
| WANG Yanhang |
China Building Materials Academy, Beijing , China |
| ZU Chengkui |
China Building Materials Academy, Beijing , China |
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| Abstract: |
| With the rapid development of radar detection technology, the electromagnetic shielding stealth of weapons and warplanes is becoming more and more important in modern warfare, especially in guided missiles, weapon pods and other glass surfaces. During the occasions above, the high optical transmittance and strong electromagnetic shielding effectiveness are common technical requirements. The work aims to investigate the effect law and mechanism of deposition temperature of the substrate layer ITO on the photoelectric properties of ITO/Au transparent conductive films, so as to improve the photoelectric properties of ITO/Au films. By employing the direct current magnetron sputtering technology, ultra-thin Au films were deposited on the ITO films prepared at different deposition temperatures (50-300 ℃). The surface morphology, roughness, transmittance, and surface resistivity of the ITO/Au films were characterized and tested by scanning electron microscopy, atomic force microscopy, spectrophotometry, and a four-point probe resistivity meter. In order to further analyze the surface state of the ITO films, the surface free energy of the ITO films was calculated by geometric-mean method and harmonic-mean method, with ultra-pure water, formamide and diiodomethane as test liquids. The effect mechanism of the ITO film deposition temperature on the photoelectric properties of the ITO/Au films was explained by numerical analysis of the surface free energy of ITO films prepared at different deposition temperatures. It was found that, in the same ultra-thin Au film deposition process, the optoelectronic properties of the ITO/Au films were improved as the deposition temperature of the substrate layer ITO film increased. Meanwhile, the ultra-thin Au film deposited on the surface of the ITO film prepared at a higher deposition temperature had lower roughness and more continuous growth morphology. This was because that when the deposition temperature was higher than 200 ℃, the ITO film underwent a polycrystalline transformation. The polycrystalline ITO had a higher surface free energy than that of the amorphous state, which was more conducive to the spreading of ultra-thin Au films. The electrical properties of the ITO/Au film were closely related to the growth continuity of the ultra-thin Au film, and better continuity of the ITO/Au film promoted the photoelectric properties. When the ITO deposition temperature reached 300 ℃, the geometric-mean of the surface free energy for the ITO film was calculated to be 45.2 mJ/m2, and the harmonic-mean was calculated to be 48.1 mJ/m2. On this basis, the ITO/Au thin films, with high photoelectric property compatibility and low surface roughness, were prepared. The average transmittance of visible light was 47.5%, the surface square resistance was 5.65 Ω/sq, and the surface roughness was 1.42 nm. In conclusion, the deposition temperature of the ITO film has a great effect on the photoelectric properties of the ITO/Au film. With the increase of the deposition temperature, the ITO film changes from amorphous to polycrystalline state. Due to the polycrystalline transition, the surface free energy of the ITO film increases, which effectively promotes the spreading of the ultra-thin Au film. The improvement of the continuity of the ultra-thin Au film obviously promotes the improvement of the photoelectric properties of the ITO/Au film. This research may provide process guidance and theoretical reference for the research and industrial production of ITO/Au thin films. |
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