| WU Haiping,AN Kang,XU Guangyu,ZHANG Yachen,LI Lijun,ZHANG Yongkang,LI Hong,ZHANG Xufang,LIU Fengbin,LI Chengming.Research Progress of Heteroepitaxial and Bonding Technology of Diamond-GaN[J],53(22):50-61 |
| Research Progress of Heteroepitaxial and Bonding Technology of Diamond-GaN |
| Received:February 03, 2024 Revised:May 28, 2024 |
| View Full Text View/Add Comment Download reader |
| DOI：10.16490/j.cnki.issn.1001-3660.2024.22.004 |
| KeyWord:diamond GaN thermal management passivation layer bonding interface heteroepitaxy |
| Author | Institution |
| WU Haiping |
School of Mechanical and Materials Engineering,Beijing , China |
| AN Kang |
School of Mechanical and Materials Engineering,Beijing , China |
| XU Guangyu |
School of Mechanical and Materials Engineering,Beijing , China |
| ZHANG Yachen |
School of Mechanical and Materials Engineering,Beijing , China |
| LI Lijun |
School of Mechanical and Materials Engineering,Beijing , China |
| ZHANG Yongkang |
School of Mechanical and Materials Engineering,Beijing , China |
| LI Hong |
School of Mechanical and Materials Engineering,Beijing , China |
| ZHANG Xufang |
School of Information Science and Technology, North China University of Technology, Beijing , China |
| LIU Fengbin |
School of Mechanical and Materials Engineering,Beijing , China |
| LI Chengming |
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing , China |
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| Abstract: |
| Gallium nitride (GaN) power devices have the advantages of high power, high frequency and miniaturization, but heat dissipation has become a new problem limiting their high-power output. Diamond has the highest thermal conductivity of bulk materials and is an ideal heat dissipation material for GaN power devices. Integrating diamond with GaN power devices can reduce the operating temperature, improve power density, and promote miniaturization development of devices. However, due to the significant thermal expansion mismatch and lattice mismatch between diamond and GaN, as well as the high hardness and stable chemical properties of diamond, there are many problems in integrating it with GaN power devices. As a result, the ultra-high thermal conductivity advantage of diamond can not be fully utilized. Research and exploration have been conducted on the integration of diamond and GaN power devices, mainly including device layer heat dissipation and substrate layer heat dissipation of GaN power devices. Heat dissipation of the device layer mainly includes diamond passivation heat dissipation technology, with a heteroepitaxial diamond heat dissipation layer in the GaN device layer; Heat dissipation of the substrate layer includes bonding technology and heteroepitaxy technology. Among them, bonding technology usually requires the deposition of bonding layers or the formation of end caps on the surfaces of diamond and GaN, including surface activated bonding technology, hydrophilic bonding technology, atomic diffusion bonding technology, and hydrolysis-assisted solidification bonding technology. Heteroepitaxial technology typically requires the deposition of a buffer layer on the epitaxial surface, includes heteroepitaxial GaN on diamond technology and heteroepitaxial diamond on GaN substrate technology. The advantage of the diamond passivation layer is that the diamond is close to the hot spot, and the heat dissipation efficiency is high, the disadvantage is that the diamond layer is less compatible with the device layer. The diamond is usually deposited under low temperature, resulting in low quality and low thermal conductivity. The advantages of bonding technology lie in the generally low bonding temperature, low thermal stress between diamond and GaN, and minimal thermal damage to the GaN layer in low-temperature environments. The disadvantages include low bonding strength, poor bonding uniformity, difficulty in controlling the quality and thickness of the bonding layer, low thermal conductivity of the bonding layer material, and high cost of obtaining large-sized, low roughness, and high parallelism diamonds. The advantages of heteroepitaxial technology lie in the high bonding strength and good bonding uniformity. However, due to the thermal expansion mismatch and lattice mismatch between diamond and GaN, both heteroepitaxial technologies have problems of high stress between diamond and GaN, high thermal resistance of protective or buffer layers, and poor electrical performance of GaN device layers in diamond heteroepitaxial GaN technology. Currently, most of the research focuses solely on the device layer or the substrate layer. If they are efficiently combined, the use of diamond for three-dimensional heat dissipation in GaN power devices will significantly reduce device temperature. This article provides a detailed introduction to the advantages and application fields of GaN materials, as well as the challenges they face. It summarizes the research status, advantages and disadvantages of the aforementioned integrated technologies, and looks forward to the future development direction of diamond and GaN power device integration technology. |
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