| QIAO Guanzhong,LI Shutong,WANG Yue,LIU Jinlong,CHEN Liangxian,WEI Junjun,LI Chengming.Room Temperature Bonding of Diamond and GaN with Ti/Ag Intermediate Layer[J],53(18):175-182 |
| Room Temperature Bonding of Diamond and GaN with Ti/Ag Intermediate Layer |
| Received:September 26, 2023 Revised:March 08, 2024 |
| View Full Text View/Add Comment Download reader |
| DOI：10.16490/j.cnki.issn.1001-3660.2024.18.015 |
| KeyWord:diamond GaN Ti/Ag intermediate layer room temperature bonding intermetallic compounds |
| Author | Institution |
| QIAO Guanzhong |
Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing , China;Shunde Innovation School, University of Science and Technology Beijing, Guangdong Foshan , China |
| LI Shutong |
Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing , China |
| WANG Yue |
Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing , China;Shunde Innovation School, University of Science and Technology Beijing, Guangdong Foshan , China |
| LIU Jinlong |
Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing , China |
| CHEN Liangxian |
Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing , China |
| WEI Junjun |
Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing , China;Shunde Innovation School, University of Science and Technology Beijing, Guangdong Foshan , China |
| LI Chengming |
Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing , China |
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| Abstract: |
| Wafer bonding has become the mainstream technology for developing GaN-on-Diamond devices. Room temperature bonding technology can avoid lattice mismatch and differences in thermal expansion coefficients caused by high temperature growth process, and there is no need to consider the low thermal conductivity of the nucleation layer. The use of diamond with high thermal conductivity as a bonding material can maximize the heat dissipation capacity. Therefore, the work aims to study the bonding technology between polycrystalline diamond and GaN with Ti/Ag intermediate layer at room temperature. |
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