| XIA Tian,HAUNG Ke,ZHENG Yu-ting,CHEN Liang-xian,LIU Jin-long,WEI Jun-jun,LI Cheng-ming.Control and Optimization of Surface Morphology and Orientation Evolution of Iridium Films Prepared by Magnetron Sputtering[J],52(3):338-344, 369 |
| Control and Optimization of Surface Morphology and Orientation Evolution of Iridium Films Prepared by Magnetron Sputtering |
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| DOI：10.16490/j.cnki.issn.1001-3660.2023.03.031 |
| KeyWord:magnetronsputtering power thickness Ir films surface microstructure crystal quality |
| Author | Institution |
| XIA Tian |
Institute of Advanced Materials Technology, University of Science and Technology Beijing, Beijing , China |
| HAUNG Ke |
Institute of Advanced Materials Technology, University of Science and Technology Beijing, Beijing , China |
| ZHENG Yu-ting |
Institute of Advanced Materials Technology, University of Science and Technology Beijing, Beijing , China |
| CHEN Liang-xian |
Institute of Advanced Materials Technology, University of Science and Technology Beijing, Beijing , China |
| LIU Jin-long |
Institute of Advanced Materials Technology, University of Science and Technology Beijing, Beijing , China |
| WEI Jun-jun |
Institute of Advanced Materials Technology, University of Science and Technology Beijing, Beijing , China |
| LI Cheng-ming |
Institute of Advanced Materials Technology, University of Science and Technology Beijing, Beijing , China |
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| Abstract: |
| The preparation of high-quality Iridium films is an important step in the heteroepitaxy growth of single crystal diamond, it is self-evident that the irreplaceable role of Ir films in this area. To establish a solid foundation for the heteroepitaxy growth of single crystal diamond and prepare high quality (100) oriented Ir films, it is necessary to figure out the influence of sputtering parameters and annealing process on the quality of Ir films. The preparation of Ir films was based on RF magnetron sputtering, and single crystal (100) MgO with high crystal quality (θFWHM=0.045°) and smooth surface (Ra=0.016 nm) was used as substrate. This research was carried out as a single factor (power and thickness) experiment, when the power was studied, the range was set as 25 W, 45 W, 65 W, 85 W and 105 W, and when the thickness was studied, the range was set as 36 min, 48 min, 60 min, 72 min and 84 min, corresponding to the Ir films thickness of 150 nm, 200 nm, 250 nm, 300 nm and 350 nm, respectively. And the samples were characterized by atomic force microscopy, scanning electron microscopy, X-ray diffraction and electron back scattering diffraction, the influence of parameters on roughness, surface morphology, crystal structure and orientation was analyzed. The annealing experiment was based on vacuum annealing furnace, this experiment was carried out as a before-after experiment in the same sample. The Ir films 200 nm and 350 nm thick were used as blank space group in this experiment, and the films were set as experimental group after the characterization step. And then the Ir films of experimental group were adopted vacuum annealing treatment at 950 ℃ for 1 h. The effect of vacuum annealing treatment on the crystal quality of Ir films was analyzed by rocking curve. The Ir films grown on (100) MgO substrate had a uniform microstructure, which was composed of regular and closely arranged rectangular particles. As the power increased, the characteristic size of microstructure on the surface of Ir films gradually decreased. The films with narrowest FWHM and strongest Ir(200) peak were obtained at 45 W，too high or too low power would degrade the crystalline quality of the Ir films; the FWHM and intensity of Ir films increased with the increasement of thickness, the main reason for this phenomenon was the enhanced crystallinity of the Ir films, although the upper Ir films shielding substrate signals also contributed, but this part was eliminated by normalization of XRD patterns, the effect of Ir films thickness on the roughness and grain size was very limited. After annealing process, as was shown in the rocking curve patterns, the Ir(200) peak strength of rocking curve was enhanced and the FWHM was reduced, the crystal quality is obviously optimized. Eventually the high quality (θFWHM<0.5°) Ir films obtain smooth surface (Ra<0.5 nm) and highly preferred orientation. Power、thickness and annealing treatment can affect crystal quality and the size of microstructure. High quality Ir films with specific surface microstructure can be obtained by appropriate power and thickness combined with annealing treatment. |
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