| GUO Yan-rui,PAN Meng-chun,ZHANG Qi,HU Jia-fei,WU Rui-nan,PENG Jun-ping,QIU Wei-cheng.Progress in Controllable Growth of Multilayer Graphene on Single Crystal Metal Substrate[J],52(3):19-34 |
| Progress in Controllable Growth of Multilayer Graphene on Single Crystal Metal Substrate |
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| DOI：10.16490/j.cnki.issn.1001-3660.2023.03.002 |
| KeyWord:metal substrate chemical vapor deposition multilayer graphene growth mode layer number control |
| Author | Institution |
| GUO Yan-rui |
College of Intelligent Science, National University of Defense Technology, Changsha , China |
| PAN Meng-chun |
College of Intelligent Science, National University of Defense Technology, Changsha , China |
| ZHANG Qi |
College of Intelligent Science, National University of Defense Technology, Changsha , China |
| HU Jia-fei |
College of Intelligent Science, National University of Defense Technology, Changsha , China |
| WU Rui-nan |
College of Intelligent Science, National University of Defense Technology, Changsha , China |
| PENG Jun-ping |
College of Intelligent Science, National University of Defense Technology, Changsha , China |
| QIU Wei-cheng |
College of Intelligent Science, National University of Defense Technology, Changsha , China |
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| Abstract: |
| As an ideal two-dimensional material, graphene has attracted extensive attention due to its advantages of excellent mechanical properties, low resistivity and high thermal conductivity. In particular, the electrical properties of graphene can be changed by adjusting the number of graphene layers, such as adjustable band gap, semiconductor properties, special quantum behavior, etc. So as to expand the application of graphene in flexible transparent electrodes, high temperature superconductivity, high-performance sensing and other fields. At present, many studies have been done on the preparation of high-quality monolayer of graphene on metal substrates. It is found that when monolayer graphene covers metal substrate, the substrate loses its catalytic activity, making the controllable growth of high-quality multilayer graphene very difficult. In order to prepare multilayer graphene, researchers have explored a variety of growth methods. Two common growth modes of multilayer graphene on single crystal metal substrate are summarized here:layer by layer up growth controlled by surface nucleation and layer by layer down growth controlled by segregation nucleation. For substrates with low carbon solubility or high carbon solubility but low actual carbon amount, the multilayer graphene grows mainly in a layer by layer up mode. Corresponding to the layer by layer up growth mode is surface nucleation controlled growth, such as using gas source molecular beam epitaxy, double temperature region chemical vapor deposition, plasma enhance chemical vapor deposition, metal assisted catalysis and other means to provide additional carbon free radicals for the continuous growth of multilayer graphene. The advantage of surface nucleation to control growth is that there are abundant means and adequate supply of carbon sources, which could form graphene of large size with different layer thickness theoretically. The disadvantage is that the controllability of nucleation density and orientation of multilayer graphene is weak, which is easy to cause small domain size and poor uniformity of graphene. In addition to substrate surface reaction growth, the gas phase reaction during CVD growth also affects the types, transfer and adsorption of carbon free radicals, thus having a profound impact on the cleanliness, growth rate and quality of graphene. Corresponding to the layer by layer down growth mode is segregation nucleation controlled growth, the alloy or elemental metal substrate with high carbon solubility is used to dissolve carbon at high temperature, and carbon segregation is controlled to grow multilayer graphene at cooling process. The advantage of segregation control growth is mainly solid phase reaction, which is not easily affected by adverse factors in the gas phase, carbon dissolution and segregation are more controllable, and the growth quality is higher. The disadvantages are that limited substrates type and long growth cycle. It is necessary to accurately control parameters such as the carbon dissolution amount, cooling rate and so on to grow large and uniform multilayer graphene with controllable layer thickness. In order to maximize the application potential of multilayer graphene in the field of electronics, the requirements of multilayer graphene for quality, performance, cost and scale will be higher in the future, focusing on the following aspects:1) Large-area uniform graphene preparation with controllable layer thickness; 2) Control of stacking structure between layers of graphene; 3) Low-cost, large-scale production of multilayer graphene. This paper is helpful to provide a new solution for the controllable growth of multilayer graphene and promote the development and application of multilayer graphene. |
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