| DUAN Yong-li,ZANG Hao-tian,DENG Wen-yu,QI Li-jun,DU Guang-yu,XIE Yuan-hua,LIU Kun.Binding Force Influencing Mechanism of Polysilicon Film Prepared by Aluminum Induction[J],50(7):172-178, 202 |
| Binding Force Influencing Mechanism of Polysilicon Film Prepared by Aluminum Induction |
| Received:May 19, 2020 Revised:November 04, 2020 |
| View Full Text View/Add Comment Download reader |
| DOI：10.16490/j.cnki.issn.1001-3660.2021.07.017 |
| KeyWord:polysilicon aluminum induction film adhesion first-principles calculation adsorption sites density of states |
| Author | Institution |
| DUAN Yong-li |
Shenyang General Magnetic Co., Ltd, Shenyang , China |
| ZANG Hao-tian |
School of Mechanical Engineering and Automation, Northeastern University, Shenyang , China |
| DENG Wen-yu |
Shenyang General Magnetic Co., Ltd, Shenyang , China |
| QI Li-jun |
Shenyang General Magnetic Co., Ltd, Shenyang , China |
| DU Guang-yu |
School of Mechanical Engineering and Automation, Northeastern University, Shenyang , China |
| XIE Yuan-hua |
School of Mechanical Engineering and Automation, Northeastern University, Shenyang , China |
| LIU Kun |
School of Mechanical Engineering and Automation, Northeastern University, Shenyang , China |
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| Abstract: |
| The influencing mechanism of the film bonding force of the polysilicon film prepared by the aluminum induction method was analyzed. Al/α-Si composite films and Al2O3/α-Si composite films were prepared by magnetron sputtering equipment, and the information of the bonding force of the two samples were obtained and compared using a scratch meter. First-principles calculation was used to analyze the optimal adsorption positions of Si atoms upon the Al layer and Al2O3 layer. The electron transfer situation during the adsorption process and the electron density of states were also observed. The critical load of Si attached to the Al layer is higher than that attached to the Al2O3 layer. The best adsorption site of Si on Al(001) surface was site 2, but the best adsorption site of Si on Al2O3(001) surface was not found. Si had different electron gains and losses at different points on the Al2O3(001) surface. The effect of Si adsorbing the Al2O3 layer is weaker than the effect of adsorbing the Al layer, which can be concluded by the results that the Al/Si metal bond connection exists in the Si/Al interface layer during the adsorption of Si on the Al layer. The 3p orbital electrons of the Si atom and the 3s and 3p orbital electrons of the Al atom play an adsorption role. The increase in the number of electron states of 3p orbital electrons indicates that electron transfer occurs during the adsorption process, and silicides are formed between the film layers, which further improves the bonding force between the film layers. During the adsorption of Si atoms in the Al2O3 layer however, the electron gain and loss of Si are different at different adsorption sites. Part of the Si ions and the Al ions in Al2O3 exhibit metallization at the same time. The force of the metal ion bond reduces the possibility of Si ions and O ions forming a covalent bond, thus reducing the ability of Al2O3 to adsorb Si. As a conclusion, Si forms a Si compound with Al during the adsorption process of Si on the Al layer, which in turn improves the interlayer bonding force. The metallicity of Si reduces the possibility of forming a covalent bond with O after the Al2O3 intermediate layer is added, so the adjunction of Al2O3 intermediate layer will reduce the interlayer bonding force. |
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