ZHOU Yue,WANG Yu-ting,YI Fu-ting,WANG Bo,LIU Jing,ZHANG Tian-chong.Development and Performance of Equipment for Polishing Inside Walls of Micro-holes Based on Magnetic-field-assisted Polishing Technology[J],47(6):252-257 |
Development and Performance of Equipment for Polishing Inside Walls of Micro-holes Based on Magnetic-field-assisted Polishing Technology |
Received:December 08, 2017 Revised:June 20, 2018 |
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DOI:10.16490/j.cnki.issn.1001-3660.2018.06.036 |
KeyWord:magnetic-field-assisted polishing technology polishing inside walls of micro-holes polishing equipment magnetic flux density roughness |
Author | Institution |
ZHOU Yue |
1.Institute of High Energy Physics, Chinese Academy of Sciences, Beijing , China; 2.University of Chinese Academy of Sciences, Beijing , China |
WANG Yu-ting |
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing , China |
YI Fu-ting |
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing , China |
WANG Bo |
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing , China |
LIU Jing |
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing , China |
ZHANG Tian-chong |
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing , China |
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Abstract: |
The work aims to develop equipment for polishing inside walls of micro-holes based on magnetic-field-assisted polishing technology. The polishing equipment applicable to inside walls of micro-holes was designed and developed by utilizing properties of magnetic-field-assisted polishing solution and drawing on traditional polishing theory. Based upon this polishing equipment, a series of performance studies were performed to the equipment. Polishing studies were applied to porous nickel samples and normal silicon wafers under different conditions, and polishing results were analyzed. Performance study results of the polishing equipment showed that stable gradient alternating magnetic field was generated by the equipment, which coincided with our expectation and could be used for further studies of sample polishing. Though the equipment had no obvious effect on polishing of porous nickel samples, the roughness of silicon wafers decreased from 1.24 nm to 0.56 nm. Polishing studies of silicon wafers showed that the roughness decreased as time advanced. The self-made equipment for polishing inside walls of micro-holes based on magnetic-field-assisted polishing technology can be used for polishing silicon wafers. The relationship between polishing effect and magnetic field control parameters can be explored subsequently, and the polishing equipment can be applied to polishing of samples with micro-hole structure step by step. |
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