| YUAN He-wei,LI Jia-jun,LIU Hao,LI Zhen-rui,XU Kai,SUN Zhan-feng,SUN Xue,CHEN Guang-chao.Single Crystal Diamond Trenched by UV Pulsed Laser[J],47(4):24-28 |
| Single Crystal Diamond Trenched by UV Pulsed Laser |
| Received:September 21, 2017 Revised:April 20, 2018 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2018.04.004 |
| KeyWord:diamond UV pulsed laser pulse frequency pulse energy photochemical effect plasma diagnosis OES |
| Author | Institution |
| YUAN He-wei |
1.University of Chinese Academy of Sciences, Beijing , China; 2.Joint Laboratory of Electron Microscope, Beijing , China |
| LI Jia-jun |
1.University of Chinese Academy of Sciences, Beijing , China; 2.Joint Laboratory of Electron Microscope, Beijing , China |
| LIU Hao |
1.University of Chinese Academy of Sciences, Beijing , China; 2.Joint Laboratory of Electron Microscope, Beijing , China |
| LI Zhen-rui |
1.University of Chinese Academy of Sciences, Beijing , China; 2.Joint Laboratory of Electron Microscope, Beijing , China |
| XU Kai |
1.University of Chinese Academy of Sciences, Beijing , China; 2.Joint Laboratory of Electron Microscope, Beijing , China |
| SUN Zhan-feng |
1.Joint Laboratory of Electron Microscope, Beijing , China; 2.KYKY Technology Co., Ltd, Beijing , China |
| SUN Xue |
1.Joint Laboratory of Electron Microscope, Beijing , China; 2.KYKY Technology Co., Ltd, Beijing , China |
| CHEN Guang-chao |
1.University of Chinese Academy of Sciences, Beijing , China; 2.Joint Laboratory of Electron Microscope, Beijing , China |
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| Abstract: |
| The work aims to study the processing of single crystal diamond by ultraviolet laser and analyze the trench effect. In vacuum, a single crystal diamond was irradiated by a pulse laser with 248 nm(KrF) wavelength, 500~700 mJ pulse energy, 1~9 Hz pulse frequency and 0.5~6.3 W laser power. The generated plasma was diagnosed by optical emission spectrum (OES). The trenched diamond was characterized and analyzed by Raman spectrum and scan electronic microscope (SEM). The trench was found on the diamond surface after laser irradiation. The trenching rate was obviously subject to laser frequency till the pulse frequency arrived at a threshold value to keep the trenching rate unchanged as the pulse frequency and energy. The laser-induced plasma wasmainly composed of C3, while C1 and C2 were ones else. The influence of laser frequency and energy on the trenching rate ismainly due to the laser-induced plasma. Besides, the surface of the micro-groove of diamond issmooth without obvious cracks after laser trenching. |
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