| YANG Tao,ZHOU Xi-ying,DA Jian-cheng,ZHU Yu-kun.Effect of Nitrogen Flow Rate on Properties of NGZO Films Deposited by Magnetron Sputtering Method[J],46(2):103-107 |
| Effect of Nitrogen Flow Rate on Properties of NGZO Films Deposited by Magnetron Sputtering Method |
| Received:August 12, 2016 Revised:February 20, 2017 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2017.02.016 |
| KeyWord:N-Ga co-doped zinc oxide films nitrogen radio frequency magnetron sputtering photoelectric properties |
| Author | Institution |
| YANG Tao |
School of Materials Engineering, Shanghai University of Engineering Science, Shanghai , China |
| ZHOU Xi-ying |
School of Materials Engineering, Shanghai University of Engineering Science, Shanghai , China |
| DA Jian-cheng |
School of Materials Engineering, Shanghai University of Engineering Science, Shanghai , China |
| ZHU Yu-kun |
School of Materials Engineering, Shanghai University of Engineering Science, Shanghai , China |
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| Abstract: |
| The work aims to prepare high-quality N-Ga co-doped zinc oxide (NGZO) films on glass by means of magnetron sputtering coating technology. By means of radio frequency magnetron sputtering method, the thin films were prepared at flow ratios of 25/10, 25/20, 25/25 and 25/30 ((mL/min)/(mL/min)) with argon and nitrogen connected. Phase structure and surface topography of the films were analyzed by XRD and SEM. The transmittance, carrier concentration, carrier mobility ratio and film resistivity were studied by means of UV/visible spectrophotometer and Hall effect tester. Compare with N-free Ga doped ZnO (GZO) film, average transmittance ratio of NGZO was above 80% in visible region, especially 600~800 nm, meeting the transmittance ratio requirements for transparent conductive film. The carrier concentration of GZO film was higher, resistivity was lower. Once N was doped in the film, the carrier concentration and carrier mobility of NGZO film declined while the resistivity increased. In N-Ga co-doped thin film, the doped N atom occupies O vacancy and draws electrons around O vacancy, reducing lattice distortion and producing electron holes, and as a result, the electron carrier concentration reduces while both the electron hole concentration and the resistivity increase. Along with the change of nitrogen flow, the film is provided with the best comprehensive performance at the nitrogen flow of 25 mL/min. This film is applicable to such applications requiring larger resistivity as UV-detector, and may promote change from n-type to p-type. |
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