| CHEN Hai-feng,XUE Ying-jie.Research Progress of Magnetron Sputtering Target at Home and Abroad[J],45(10):56-63 |
| Research Progress of Magnetron Sputtering Target at Home and Abroad |
| Received:March 31, 2016 Revised:October 20, 2016 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2016.10.009 |
| KeyWord:magnetron sputtering target etching structure optimization computer simulation plasma characteristics target cooling system |
| Author | Institution |
| CHEN Hai-feng |
School of Mechanic and Electronic Engineering, Shaanxi University of Science & Technology, Xi′an , China |
| XUE Ying-jie |
School of Mechanic and Electronic Engineering, Shaanxi University of Science & Technology, Xi′an , China |
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| Abstract: |
| Magnetron sputtering is widely used in manufacturing thin films such as monolayer or composite thin films, magnetic or superconducting thin films as well as some functional thin films for certain purposes, and plays an irreplaceable role in various industrial fields due to low sputtering temperature and high deposition rate. Magnetron sputtering plays an irreplaceable role in the field of science and industrial production. By illustrating etching mechanism of target based on introduction of magnetron sputtering principle, the work aims to summarize and analyze latest research progress at home and abroad from the aspects of improving magnetic field distribution on target face and simulating etch topography of target. Studies showed that, by means of adjusting the magnet spatial arrangement or increasing magnetic conductive shims, sputtering area of target and utilization of target could be expanded effectively by realizing relative movement between magnetic field and target by virtue of appropriate moving parts. In the simulation of target etching, characteristics of the plasma on the target face were studied by changing technological conditions in sputtering (magnetic field intensity, cathode voltage, etc). Results showed that the target etching morphology became narrow with the increase of magnetic field intensity, etching rate of target increased with that of working voltage, etc. All these research results are of guiding significance to technological parameter optimization of magnetron sputtering. Finally, the effects of target cooling system design and target surface treatment on sputtering are forecasted. |
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