ZOU Feng,XU Jun-qi,SU Jun-hong,MA Jian-bo.Influence of Laser-conditioning on Laser Induced Damage Capability of BaF2 Thin Films[J],(5):4-6,24
Influence of Laser-conditioning on Laser Induced Damage Capability of BaF2 Thin Films
Received:May 17, 2012  Revised:October 20, 2012
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KeyWord:laser-conditioning  thin films  BaF2  laser induced damage threshold
           
AuthorInstitution
ZOU Feng School of Photoelectric Engineering, Xi'an Technological University, Xi'an , China
XU Jun-qi School of Photoelectric Engineering, Xi'an Technological University, Xi'an , China
SU Jun-hong School of Photoelectric Engineering, Xi'an Technological University, Xi'an , China
MA Jian-bo School of Photoelectric Engineering, Xi'an Technological University, Xi'an , China
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Abstract:
      In order to enhance the laser induced damage capability of optical films components, besides advanced methods and processes, post-treatment has significant influence on the laser induced damage threshold(LIDT)of thin films. Q switch Nd:YAG laser of the working wave length at 1064 nm, was used to post process on BaF2 single layers with thickness of λ/2(λ=1064 nm)deposited by electron beam evaporation, and the laser induced damage properties were investigated. By changing the energy density and pulse number under the spot size remained a fixed value, their effects on thin films damage threshold were studied respectively, the optimal processing parameters were obtained: energy density is 9.9J/cm2 and pulse number is 3 times. The LIDT of post processed BaF2 films was improved from 16.5J/cm2 to 29.9 J/cm2.
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