WEI Mei-qin,ZHANG Guang-sheng,YAO Wen-jie.Aluminum-doped Zno Thin Films by the Sol-Gel Method[J],36(4):34-36
Aluminum-doped Zno Thin Films by the Sol-Gel Method
Received:March 29, 2007  Revised:August 10, 2007
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KeyWord:Sol-gel method  Al-doping  C-axis orientation  Electrical and optical properties  Zno thin film
        
AuthorInstitution
WEI Mei-qin School of Mechanical Engineering, Anhui University of Technology and Science, Wuhu , China
ZHANG Guang-sheng School of Mechanical Engineering, Anhui University of Technology and Science, Wuhu , China
YAO Wen-jie Anhui Baihu Valve Factory Limited Company, Chaohu , China
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Abstract:
      Al-doped Zno thin films were fabricated on glass substrates by sol-gel method. Their microstructures and morphologies were studied with X-ray diffraction ( XRD) and atomic force microscopy( AFM) . The results indicate that the thin films by the Sol-Gel method are c-axis orientation , homogeneous and dense surface with the crystalline structure of hexagonal wurtzite. Using the measurement of UV-Vis transmittance spectroscopy and standard four probes method, the electrical and optical properties of Al-doped Zno thin films were investigated. The experimental data show that their optical transmittance are over 80% in visible region and their favorable electrical conducting has been achieved with resistivity of 8. 0 xl0 -4Ω . cm derived by Al/Zn ratios of 4. 0% ; sol concentration of 0. 6mol/L; re-heat treatment at 300 0C ; annealing at 500℃ .
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