| ZHU Li-qun,GU Jing.Structure Design and Development of Thin Multilayer RAM[J],36(3):49-52,73 |
| Structure Design and Development of Thin Multilayer RAM |
| Received:January 27, 2007 Revised:June 10, 2007 |
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| DOI： |
| KeyWord:Thin type Multilayer Coating Structure design Radar absorbing materials ( RAM) |
| Author | Institution |
| ZHU Li-qun |
School of Materials Science and Engineering, Beijing University of Aeronautics and Astronautics,Beijing , China |
| GU Jing |
School of Materials Science and Engineering, Beijing University of Aeronautics and Astronautics,Beijing , China |
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| Abstract: |
| According to the development direction-thin thickness,light density , broad frequency band and intensive results of RAM,recent studies of multilayer RAM and designing methods of several broadband absorbing structures were discussed. RAM with multilayer structure and possibility to improve absorbing ability according as impedance matching principle were analyzed. Thin multilayer radar absorbing material integrating the multilayer RAM and the broadband structures is studied to enhance absorbing properties of RAM , and the novel structure of the thin multilayer RAM will produce a new field in the study of RAM. This multilayer structure is made of disperse spot on the surface,non-absorbing film inserted into inner. It indicates that the structure can improve absorbing ability according to primary experiments. |
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