乔冠中,李淑同,王越,刘金龙,陈良贤,魏俊俊,李成明.利用Ti/Ag中间层实现金刚石与GaN的室温键合[J].表面技术,2024,53(18):175-182.
QIAO Guanzhong,LI Shutong,WANG Yue,LIU Jinlong,CHEN Liangxian,WEI Junjun,LI Chengming.Room Temperature Bonding of Diamond and GaN with Ti/Ag Intermediate Layer[J].Surface Technology,2024,53(18):175-182 |
| 利用Ti/Ag中间层实现金刚石与GaN的室温键合 |
| Room Temperature Bonding of Diamond and GaN with Ti/Ag Intermediate Layer |
| 投稿时间：2023-09-26 修订日期：2024-03-08 |
| DOI：10.16490/j.cnki.issn.1001-3660.2024.18.015 |
| 中文关键词: 金刚石 氮化镓 Ti/Ag中间层 室温键合 金属间化合物 |
| 英文关键词:diamond GaN Ti/Ag intermediate layer room temperature bonding intermetallic compounds |
| 基金项目:国家自然科学基金(52172037);北京市自然科学基金(2212036);佛山市科技创新专项(BK21BE004) |
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| Author | Institution |
| QIAO Guanzhong | Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China;Shunde Innovation School, University of Science and Technology Beijing, Guangdong Foshan 528399, China |
| LI Shutong | Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China |
| WANG Yue | Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China;Shunde Innovation School, University of Science and Technology Beijing, Guangdong Foshan 528399, China |
| LIU Jinlong | Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China |
| CHEN Liangxian | Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China |
| WEI Junjun | Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China;Shunde Innovation School, University of Science and Technology Beijing, Guangdong Foshan 528399, China |
| LI Chengming | Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China |
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| 中文摘要: |
| 目的 为了实现金刚石与GaN的良好键合，利用Ti/Ag中间层，在室温下开展了多晶金刚石与GaN的键合技术研究。方法 首先，分别在抛光自支撑多晶金刚石晶圆以及GaN晶圆表面，通过磁控溅射依次沉积Ti黏附层、Ti/Ag梯度层以及纳米Ag层，形成Ti/Ag过渡层复合结构。然后通过真空键合系统成功实现了金刚石与GaN键合。通过扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线衍射(XRD)以及X射线光电子能谱(XPS)等表征手段，对键合前后样品表面进行形貌及结构分析;通过超声扫描显微镜(SAM)，以及拉伸力学测试系统，对键合后的键合率以及键合强度进行评价。结果 借助Ti/Ag中间层进行键合，对晶圆表面的粗糙度具有较高容忍度，且在常温下即能实现良好键合，室温键合率达到95.5%。通过拉伸强度测试可知，键合强度达到13.7 MPa。结论 Ag纳米颗粒高的表面活性是实现键合界面常温融合的关键，而Ti底层良好的附着特性，Ti/Ag梯度层的引入以及Ti与Ag之间通过扩散反应形成的金属间化合物，则是提高金刚石与GaN键合强度的关键因素。 |
| 英文摘要: |
| Wafer bonding has become the mainstream technology for developing GaN-on-Diamond devices. Room temperature bonding technology can avoid lattice mismatch and differences in thermal expansion coefficients caused by high temperature growth process, and there is no need to consider the low thermal conductivity of the nucleation layer. The use of diamond with high thermal conductivity as a bonding material can maximize the heat dissipation capacity. Therefore, the work aims to study the bonding technology between polycrystalline diamond and GaN with Ti/Ag intermediate layer at room temperature. |
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