黄展亮,柏显亭,潘继生,阎秋生.工艺参数对浸没式直流介电泳辅助化学机械抛光蓝宝石晶片的影响[J].表面技术,2024,53(18):144-155.
HUANG Zhanliang,BAI Xianting,PAN Jisheng,YAN Qiusheng.Influence of Process Parameters on Immersed CMP Assisted by DC Dielectrophoresis of Sapphire Wafers[J].Surface Technology,2024,53(18):144-155 |
| 工艺参数对浸没式直流介电泳辅助化学机械抛光蓝宝石晶片的影响 |
| Influence of Process Parameters on Immersed CMP Assisted by DC Dielectrophoresis of Sapphire Wafers |
| 投稿时间：2024-01-02 修订日期：2024-03-05 |
| DOI：10.16490/j.cnki.issn.1001-3660.2024.18.012 |
| 中文关键词: 介电泳效应 化学机械抛光 蓝宝石晶片 工艺参数 抛光垫 有效磨料数 加工效果 |
| 英文关键词:dielectrophoresis chemical mechanical polishing sapphire wafer process parameters polishing pad effective number of abrasives processing effect |
| 基金项目:国家重点研发计划(2023YFE0204400);国家自然科学基金(52075102);广东省基础与应用基础研究基金(2023A1515010922) |
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| Author | Institution |
| HUANG Zhanliang | School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China |
| BAI Xianting | School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China |
| PAN Jisheng | School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China |
| YAN Qiusheng | School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China |
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| 中文摘要: |
| 目的 为了实现蓝宝石晶片的高效超光滑表面加工，提出浸没式直流介电泳辅助化学机械抛光方法，研究该方法对蓝宝石晶片的加工适应性。方法 搭建了浸没式直流介电泳辅助化学机械抛光系统，通过单因素实验探究接入电压、工件及抛光盘转速、偏摆移动速度、抛光时间及抛光垫类型对蓝宝石晶片的加工效果，并深入分析负介电泳效应对CMP加工过程的影响。结果 直流介电泳辅助CMP方法可以显著提高蓝宝石晶片的抛光效果，在2 000 V的接入电压下，化学机械抛光的材料去除率MRR提高了99.97%，达到了7.53 nm/min，表面粗糙度Ra降低至2.51 nm，工件表面划痕数量明显减少。工件及抛光盘转速、偏摆移动速度的提升都会使抛光MRR和Ra先升后降，带槽的抛光垫对介电泳效应控制磨料起促进作用。各个因素的影响对提高有效磨料数起交互作用，负介电泳效应促使磨料聚集在抛光垫表面，而工件与抛光垫的相对运动促使磨料更新循环。结论 采用接入电压2 000 V、工件及抛光盘转速80 r/min、偏摆速度60 r/min，在精抛垫下抛光蓝宝石晶片90 min，可以获得表面粗糙度Ra为0.953 nm的光滑表面。 |
| 英文摘要: |
| The extensive utilization of sapphire is attributed to its exceptional physical and chemical properties, as well as its outstanding optical performance. Currently, the prevalent method for surface processing of sapphire chips is chemical mechanical polishing, which involves creating a softening layer through chemical reactions on the workpiece's surface and subsequently removing it using free abrasives to enhance the machining efficiency. However, the centrifugal effect resulting from the rotational motion of both the workpiece and polishing disc during the processing process hampers efficient utilization of added abrasive in titration. The electrophoretic effect exploits the dielectric polarization phenomenon in a non-uniform electric field to induce particle motion, thereby facilitating the controlled displacement of abrasives. To enhance the processing efficiency of CMP, this study proposed an immersion-based method for direct current electrophoretic-assisted chemical mechanical polishing by synergistically integrating the negative electrophoresis effect and chemical mechanical polishing. According to the processing principle, an experimental device was constructed for submerged direct current electrophoresis-assisted chemical mechanical polishing. Single-factor polishing experiments were conducted to investigate the adaptability of access voltage, workpiece and polishing disc speed, swing displacement speed, polishing time, and type of polishing pad based on the influencing factors of electrophoretic effect in sapphire chip fabrication. Meanwhile, the contact model of abrasive, workpiece, and polishing pad was established in the machining process, accompanied by the development of an electrophoretic control model for abrasive. The impact of electrophoretic effect on abrasive control in immersion polishing was thoroughly analyzed. The experimental results demonstrated that electrophoretic effects significantly enhanced the chemical mechanical polishing (CMP) performance of sapphire wafers, leading to a remarkable increase in material removal rate (MRR) by 99.97% at 2 000 V. Moreover, the surface roughness Ra was reduced by 24.47%. Notably, a noticeable reduction in surface scratches was observed. Increasing the rotational speed of both the workpiece and polishing disc, as well as the eccentric displacement speed, initially enhanced but subsequently diminished both the material removal rate (MRR) and surface roughness (Ra) during polishing. This phenomenon arose due to the generation of centrifugal force and fluid flow resulting from the relative motion between the workpiece and polishing disc, which disrupted the abrasive aggregation while also facilitating their renewal. By utilizing polishing pads with grooves, the electrophoretic effects could effectively regulate the presence of free silica on the surface, leading to enhanced polishing efficiency in comparison to non-grooves pads and achieving a more refined surface texture. The electrophoretic effect enabled better control of free silica on the slotted polishing pad, resulting in enhanced polishing efficiency compared with non-slotted pads and achieving a smoother surface. Notably, the polyurethane polishing pad (SH) exhibited superior performance. Finally, employing an input voltage of 2 000 V, a workpiece and polishing disc rotational speed of 80 rpm in the same direction, a swing speed of 60 mm/min, and utilizing a precision polishing pad, sapphire chips were subject to a processing duration of 90 min. This resulted in achieving an impressive material removal rate of 8.645 nm/min while ensuring the surface remained unblemished with an exceptional surface roughness Ra value measuring at merely 0.953 nm. |
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