王通,徐均琪,李阳,苏俊宏,孙少斌,刘政.硫系玻璃基底减反射激光薄膜的设计及制备[J].表面技术,2024,53(12):252-259.
WANG Tong,XU Junqi,LI Yang,SU Junhong,SUN Shaobin,LIU Zheng.Design and Preparation of Anti-reflection Laser Films on Chalcogenide Glass Substrate[J].Surface Technology,2024,53(12):252-259 |
| 硫系玻璃基底减反射激光薄膜的设计及制备 |
| Design and Preparation of Anti-reflection Laser Films on Chalcogenide Glass Substrate |
| 投稿时间：2023-06-27 修订日期：2023-09-23 |
| DOI：10.16490/j.cnki.issn.1001-3660.2024.12.021 |
| 中文关键词: 硫系玻璃 减反射薄膜 附着力 红外 激光损伤阈值 |
| 英文关键词:chalcogenide glass anti-reflection film adhesion infrared laser damage threshold |
| 基金项目: |
|
|
| Author | Institution |
| WANG Tong | Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an 710021, China |
| XU Junqi | Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an 710021, China |
| LI Yang | Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an 710021, China |
| SU Junhong | Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an 710021, China |
| SUN Shaobin | Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an 710021, China |
| LIU Zheng | Joint Laboratory of Advanced Optical Manufacturing Technology, Xi'an Institute of Optics and Precision Mechanics of CAS, Xi'an 710119, China |
|
| 摘要点击次数: |
| 全文下载次数: |
| 中文摘要: |
| 目的 随着红外技术的发展，硫系玻璃已作为红外光学元件得到一定使用，然而硫系玻璃在3~5 μm波段的透射率不能满足使用要求，并且红外薄膜用于探测器中易遭受强激光的辐照而损伤。针对硫系玻璃(As40Se60)基底镀制薄膜易脱落、透射率低，以及抗激光能力差等问题，设计并制备出在3~5 μm波段具有良好透射率、在1 064 nm处具有抗激光能力的薄膜。方法 制备ZnSe、ZnS和YbF3单层膜，测量其光学常数并进行膜系设计。优化设计出的红外多层薄膜结构为S|0.61H0.21L0.32M0.26L0.2M0.32L0.28M0.17L0.35M0.28L0.13M0.61L|A，其中H代表ZnSe、M代表ZnS、L代表YbF3、S代表硫系玻璃、A代表空气，数字为膜层的光学厚度，设计波长λ0=4 000 nm，薄膜的厚度为2 055 nm，光谱性能为:在3~5 μm波段双面镀膜时的平均透射率为95.67%，峰值透射率为99.11%，(1 064±40)nm波段单面镀膜时的平均透射率为7.62%。在制备过程中，从膜基材料的热膨胀系数差异入手进行优化，工艺参数为:烘烤温度70 ℃，离子能量100 eV，离子束流20 mA，此参数下薄膜样品的残余应力为−30.0 MPa。结果 所制备薄膜的附着性能符合要求，在3~5 μm波段双面镀膜时平均透射率为95.38%，峰值透射率为99.07%，在(1 064±40)nm范围内单面镀膜时的平均透射率为4.46%，在1 064 nm处的激光损伤阈值为7.6 J/cm2。结论 在硫系玻璃基底制备薄膜时，从膜基材料的热膨胀系数差异入手，合理优化烘烤温度与离子参数，可以降低薄膜的残余应力，提高薄膜的附着性能。 |
| 英文摘要: |
| With the development of infrared technology, chalcogenide glass has been used as an infrared optical element to a certain extent, but the transmittance of chalcogenide glass in the 3-5 μm band can not meet the requirements of use, and the infrared thin film for detectors is easily damaged by strong laser irradiation. In order to solve the problems that the optical film plated on chalcogenide glass (As40Se60) substrate is easy to fall off, the transmittance is low, and the laser resistance is poor, the work aims to design and prepare a thin film with good transmittance in the 3-5 μm band and laser resistance at 1 064 nm. The optical constants of ZnSe, ZnS and YbF3 monolayer films were deposited and measured by ion beam-assisted thermal evaporation technology, and the ZnSe film materials were used as the transition layer between the film-groups to improve the film adhesion, and the film system design of infrared anti-reflection laser films was carried out by combining ZnS and YbF3 film materials. The optical constant measured by the above-mentioned single-layer film was input into the TFCalc film design software, and the infrared film with anti-reflection function in the 3-5 μm band and high reflection function at 1 064 nm was optimized on the As40Se60 glass substrate through TFCalc software. The film structure was S | 0.61H0.21L0.32M0.26L0.2M0.32L0.28M0.17L0.35M0.28L0.13M0.61L|A, of which H represented ZnSe material, M represented ZnS material, L represented YbF3 material, S represented chalcogenide glass and A represented air, and the design wavelength of the film system was 4 000 nm. The thin film layer thickness was 2 055 nm and the theoretical design spectral performance of the film was as follows:the average transmittance of double-sided coating samples in the range of 3-5 μm was 95.67%, the peak transmittance was 99.11%, and the average transmittance of single-sided coating samples in the range of (1 064±40) nm was 7.62%. The preparation of thin films was carried out by ion beam-assisted thermal evaporation technology, and the process parameters were optimized from the large difference in thermal expansion coefficient between chalcogenized glass and film materials. The optimized process parameters were:baking temperature of 70 ℃, ion energy of 100 eV, ion beam of 20 mA. Under these parameters, the residual stress of the thin film sample was −30.0 MPa and Zygo laser interferometer was used to test the surface shape before and after coating. The adhesion performance of the prepared film met the requirements. The average transmittance of the film was 95.38% and the peak transmittance was 99.07% when the film was coated on both sides in the 3-5 μm band. The average transmittance was 4.46% when the film was coated on one side in the range of (1 064±40) nm, and the laser damage threshold at 1 064 nm was 7.6 J/cm2. When a film is prepared on the chalcogenide glass substrate, starting from the difference in the thermal expansion coefficient between the glass itself and the film material, the process parameters such as baking temperature and ion parameters can be reasonably optimized, which can reduce the residual stress of the film and improve the adhesion performance of the film on the chalcogenide glass substrate. |
| 查看全文 查看/发表评论 下载PDF阅读器 |
| 关闭 |
|
|
|
渝公网安备 50010702501715号