阎秋生,陈缘靓,夏江南,雒梓源,汪涛.金属钼圆基片平面研磨及其表面创成机理研究[J].表面技术,2024,53(12):181-192.
YAN Qiusheng,CHEN Yuanjing,XIA Jiangnan,LUO Ziyuan,WANG Tao.Planar Lapping Properties and Surface Formation Mechanism of Metal Molybdenum Wafer Substrates[J].Surface Technology,2024,53(12):181-192 |
| 金属钼圆基片平面研磨及其表面创成机理研究 |
| Planar Lapping Properties and Surface Formation Mechanism of Metal Molybdenum Wafer Substrates |
| 投稿时间：2023-07-31 修订日期：2023-12-14 |
| DOI：10.16490/j.cnki.issn.1001-3660.2024.12.015 |
| 中文关键词: 钼圆基片 研磨 工艺参数 材料去除率 表面粗糙度 加工机理 |
| 英文关键词:molybdenum wafer substrates lapping process parameter material removal rate surface roughness machining mechanism |
| 基金项目:国家重点研发计划(2023YFE0204400);广东省基础与应用基础研究基金(2023A1515010922) |
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| Author | Institution |
| YAN Qiusheng | School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China |
| CHEN Yuanjing | School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China |
| XIA Jiangnan | School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China |
| LUO Ziyuan | School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China |
| WANG Tao | School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China |
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| 中文摘要: |
| 目的 实现金属钼圆基片高效平坦化加工，获得超光滑表面。方法 采用游离磨料对钼圆基片进行平面研磨加工，研究磨料种类及研磨盘转速、研磨压力、研磨时间等工艺参数对研磨效果的影响规律，通过材料去除率(MRR)与表面粗糙度(Ra)的建模分析，对比钼材与高硬脆和高塑性材料，揭示其研磨工艺特性、探究其表面创成机理。结果 钼圆基片材料去除快慢和表面形貌受各因素作用的综合影响。CeO2磨料适合钼圆基片的研磨加工，材料去除方式为二体、三体摩擦塑性去除;在研磨过程中，MRR随研磨盘转速、研磨压力的递增而先增大后减小，在研磨盘转速为60 r/min、研磨压力为0.026 MPa条件下MRR达到最大;除磨料因素外，其他工艺因素对表面粗糙度的影响较小;MRR和Ra随加工时间的延长而趋于稳定;使用粒径W1 CeO2磨料在研磨盘转速为60 r/min、研磨压力为0.026 MPa下研磨40 min后，表面粗糙度Ra由46 nm降至9.53 nm，MRR达1.16 mg/min。结论 采用游离磨料研磨方法在优化工艺条件下可以有效降低表面粗糙度，获得良好表面。 |
| 英文摘要: |
| The work aims to achieve efficient flatness processing of metal molybdenum wafers and obtain a super smooth surface. Free abrasives were used to lap the molybdenum wafers. The influences of abrasive types, lapping disc rotation speed, lapping pressure and lapping time on the lapping effect were studied. Through modeling analysis of material removal rate (MRR) and the surface roughness (Ra), a comparison was made between molybdenum and highly hard-brittle and highly plastic materials to reveal their lapping properties and explore the mechanism of surface formation. The results showed that the comprehensive effect of factors on the removal rate, surface morphology forming of molybdenum wafer materials. CeO2 abrasive was suitable for lapping molybdenum wafer substrates. Material removal occurred through two-body and three-body frictional plastic removal mechanisms. The MRR during the lapping process increased first and then decreased with the increase of lapping disc rotation speed and lapping pressure. The MRR reached its maximum at 60 r/min and 0.026 MPa. Surface roughness showed minimal variation with different process parameters, except for the abrasive factor. Both MRR and Ra tended to stabilize with the increase in lapping time. By using W1 CeO2 abrasive with a particle size, a flat surface was achieved by lapping for 40 minutes at a lapping disc rotation speed of 60 r/min and a lapping pressure of 0.026 MPa, reducing the surface roughness from Ra 46 nm to Ra 9.53 nm, with MRR of 1.16 mg/min. By using the free abrasive lapping method, the surface roughness of molybdenum wafers can be effectively reduced, thus consistently achieving the desired surface for applications, under optimized process parameters. |
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