徐帅,赵兴科,赵增磊.工艺参数对氮化铝陶瓷表面激光金属化层电阻的影响[J].表面技术,2023,52(5):398-404.
XU Shuai,ZHAO Xing-ke,ZHAO Zeng-lei.Effect of Process Parameters on Resistance of Laser Metallized Layer of AlN Ceramics[J].Surface Technology,2023,52(5):398-404 |
| 工艺参数对氮化铝陶瓷表面激光金属化层电阻的影响 |
| Effect of Process Parameters on Resistance of Laser Metallized Layer of AlN Ceramics |
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| DOI：10.16490/j.cnki.issn.1001-3660.2023.05.039 |
| 中文关键词: 氮化铝 陶瓷基板 表面金属化 电阻 正交试验 激光能量密度 扫描次数 |
| 英文关键词:AlN ceramic substrate surface metallization resistance orthogonal test laser fluence scanning number |
| 基金项目:广东省重点领域研发计划激光与增材制造专题(2019B90907002);佛山市科技创新专项(BK21BE003) |
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| Author | Institution |
| XU Shuai | Shunde Graduate School, University of Science and Technology Beijing, Guangdong Foshan 528399, China;School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China |
| ZHAO Xing-ke | Shunde Graduate School, University of Science and Technology Beijing, Guangdong Foshan 528399, China;School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China |
| ZHAO Zeng-lei | Shunde Graduate School, University of Science and Technology Beijing, Guangdong Foshan 528399, China |
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| 中文摘要: |
| 目的 提高氮化铝陶瓷表面激光金属化层的导电性能。方法 采用正交试验设计方案，使用30 W纳秒光纤激光打标机制备了氮化铝陶瓷表面激光金属化试样，测量了金属层的电阻。通过极差分析和方差分析方法分析了激光工艺参数及其交互作用对氮化铝陶瓷表面激光金属化层电阻值的影响规律。结果 在本研究激光工艺参数及其取值范围内，激光功率对氮化铝表面激光金属化层电阻的影响最为显著，增大激光功率有利于降低氮化铝表面激光金属化层的电阻值。采用优化工艺参数(激光功率30 W、频率30 kHz、扫描速度100 mm/s)单次激光扫描制备激光金属化层的电阻为2.25 Ω/mm。随着重复扫描次数的增加，功率不同的激光表面金属层的电阻值向相反方向转变:小功率激光表面金属层电阻值随扫描次数增加而迅速减小，大功率激光表面金属层电阻值随扫描次数增加而增大。经10次重复扫描后，激光功率3 W(相应的激光能量密度约为15.3 J/cm2)激光金属化层的电阻值低于功率分别为30 W和18.75 W激光金属化层的电阻值。结论 采用30 W激光单次扫描，或者采用3 W激光多次扫描，有利于提高氮化铝表面激光金属化层的导电性。 |
| 英文摘要: |
| Aluminum nitride (AlN) ceramics are excellent materials for electronic packaging substrates. Selective surface laser metallization can simplify the manufacturing process of AlN substrates, shorten the manufacturing period and reduce the manufacturing cost. As conductivity of laser metallization layers cannot meet requirements for printed circuits of high-power devices, this paper carried out a systematic laser process experiment, aiming to find a way to improve the conductivity of the laser metallization layer on the surface of AlN ceramics. AlN ceramic samples used in this study was a commercially available ceramic sheet with a purity of 98wt.%, with a size of 25 mm×15 mm×1 mm. The laser scanning area was a rectangle with a size of 8 mm×1 mm. The ceramic test pieces were first rinsed with distilled water, then ultrasonically cleaned with absolute ethanol for 10 min, and dried in cold air for use. The laser equipment was a 30 W nanosecond fiber laser marking machine. The Taguchi method was adopted and a L16 (43) orthogonal scheme was selected. Three process parameters were laser power (12-30 W), frequency (20-50 kHz) and scanning speed (100-700 mm/s), respectively. Resistance values of laser metallization area was measured through the four-terminal method. The laser scanning areas under the orthogonal test parameters all had lower resistances. The resistance value of T14 sample was the smallest, which was 18 Ω (line resistance 2.25 Ω/mm); the resistance value of T1 sample was the largest, which was 220 Ω (line resistance 27.5 Ω/mm). It showed that the combination of process parameters in this study could make AlN surface laser-metallized. Laser power had the most significant effect on the resistance of the laser metallization layers of AlN samples within the process parameters and their value ranged in this study. The optimized process parameters based on the minimum resistance value were:laser power 30 W, frequency 30 kHz, and scanning speed 100 mm/s. The resistance value of the metal layer on the aluminum nitride surface prepared by single laser scanning with the optimized process parameters was 2.25 Ω/mm. With laser scanning number increased, resistance value of the metallized layer changed to the opposite direction:resistance decreased rapidly for the low-power laser process, while resistance increased rapidly for the higher-power laser process. After laser scanning for 10 times, the resistance value of the laser metallized layer with a laser power of 3 W (corresponding to a laser energy density of about 15.3 J/cm2) was lower than those of with laser power of 30 W and 18.75 W. Under the experimental parameters of this study, the resistance of the laser-metallized layers decreased with the increase of the laser fluence. It is worth pointing out that as the laser energy density in this study is mainly concentrated in 30-100 J/cm2, the optimum fluence and minimum achievable resistance cannot be determined. It suggests from this study that a single scan with a higher power laser or multiple scans with a lower power laser is beneficial to improve conductivity of laser laser-metallized surface layers of AlN substrates. |
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