张欣,黄婷,肖荣诗.晶面对单晶硅高功率绿光飞秒激光加工的影响[J].表面技术,2021,50(11):362-371.
ZHANG Xin,HUANG Ting,XIAO Rong-shi.Effect of Crystal Orientation on High Power Green Femtosecond Laser Processing of Single Crystal Silicon[J].Surface Technology,2021,50(11):362-371 |
| 晶面对单晶硅高功率绿光飞秒激光加工的影响 |
| Effect of Crystal Orientation on High Power Green Femtosecond Laser Processing of Single Crystal Silicon |
| 投稿时间：2021-04-25 修订日期：2021-05-17 |
| DOI：10.16490/j.cnki.issn.1001-3660.2021.11.039 |
| 中文关键词: 单晶硅 晶面取向 飞秒激光 刻蚀 非晶化 电子背散射衍射 |
| 英文关键词:monocrystal silicon crystal orientation femtosecond laser ablation amorphization electron backscatter diffraction |
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| Author | Institution |
| ZHANG Xin | High-power and Ultrafast Laser Manufacturing Lab, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China |
| HUANG Ting | High-power and Ultrafast Laser Manufacturing Lab, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China |
| XIAO Rong-shi | High-power and Ultrafast Laser Manufacturing Lab, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China |
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| 中文摘要: |
| 目的 研究不同晶面取向对飞秒激光刻蚀加工硅的影响。方法 采用515 nm绿光高功率飞秒激光器，通过改变激光平均功率和扫描次数，对硅(111)和(100)面进行刻蚀加工，对比研究两个晶面的凹槽刻蚀深度和凹槽底部粗糙度差异。利用电子背散射衍射(Electron Backscatter Diffraction, EBSD)技术，研究不同晶面在飞秒激光刻蚀加工中的微观行为特性，对比硅不同晶面的非晶化阈值和烧蚀阈值，同时对比不同晶面的非晶化能力和再结晶能力。结果 随着激光平均功率和扫描次数的增大，激光刻蚀形成的凹槽越来越深，相同条件下，硅(111)面的凹槽深度比(100)面的凹槽深度更大，且硅(111)面凹槽底部的粗糙度比(100)面凹槽底部的粗糙度更大。当凹槽刻蚀深度达到300 μm时，(111)面的凹槽深度比(100)面约深20 μm，粗糙度约高4 μm。通过EBSD技术获得硅两个晶面的非晶化阈值，两个晶面的非晶化阈值近似，约为0.16 J/cm2。在相同的非晶化阈值下，(111)面的非晶程度比(100)面大。在较少的激光扫描次数下，观察到硅(111)面的激光吸收率比(100)面高。结论 晶面取向不仅影响到飞秒激光多脉冲作用下硅的微观结构，而且还影响到硅的宏观飞秒激光加工效果。加工参数相同时，(111)面单晶硅的刻蚀深度明显大于(100)面单晶硅，原因是硅(111)面的非晶化能力比(100)面强，导致(111)面吸收更多的激光能量，材料去除效率更高。 |
| 英文摘要: |
| In order to study the effect of different crystal orientation on femtosecond laser processing of silicon. A 515 nm green high power femtosecond laser was used to ablate Si(111) and Si(100) by changing the average laser power and scanning times. The difference of groove ablation depth and groove bottom roughness between the two crystal planes was compared. Electron backscatter diffraction (EBSD) was used to study the micro behavior of different crystal faces in femtosecond laser ablation. The amorphization threshold and ablation threshold of different crystal faces were compared, and meanwhile the amorphization ability and recrystallization ability of different crystal faces were compared. With the increase of average laser power and scanning times, the groove formed by laser ablation becomes deeper and deeper. Under the same conditions, the groove depth of Si(111) is greater than that of Si(100), and the groove bottom roughness of Si(111) is greater than that of Si(100). When the groove depth reaches 300 μm, the groove depth of Si(111) is about 20 μm deeper than that of Si(100), the roughness of Si(111) is about 4 μm high than that of Si(100). The amorphous thresholds of the two silicon planes were obtained by EBSD technique, which were approximately 0.16 J/cm2. At the same amorphization threshold, the degree of amorphization of Si(111) is greater than that of Si(100). It is observed that the laser absorptivity of Si(111) is higher than that of the Si(100) with less laser scanning times. The crystal orientation not only affects the microstructure of silicon under the action of femtosecond laser multi pulse, but also affects the effect of femtosecond laser processing. When the processing parameters are the same, the ablation depth of Si(111) is significantly greater than that of Si(100), because the amorphous ability of Si(111) is stronger than that of Si(100), which leads to more laser energy absorption and higher material removal efficiency of Si(111). |
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