汪阳,刘秀波,欧阳春生,罗迎社,陈德强.三元层状固体润滑Ti3SiC2复合材料的制备与摩擦学研究进展[J].表面技术,2020,49(1):142-153. WANG Yang,LIU Xiu-bo,OUYANG Chunsheng,LUO Ying-she,CHEN De-qiang.Preparation and Tribological Research Progress of Ternary Layered Solid Lubricating Material Ti3SiC2 and Its Composites[J].Surface Technology,2020,49(1):142-153 |
三元层状固体润滑Ti3SiC2复合材料的制备与摩擦学研究进展 |
Preparation and Tribological Research Progress of Ternary Layered Solid Lubricating Material Ti3SiC2 and Its Composites |
投稿时间:2019-09-01 修订日期:2020-01-20 |
DOI:10.16490/j.cnki.issn.1001-3660.2020.01.017 |
中文关键词: Ti3SiC2 晶体结构 制备工艺 影响因素 摩擦学性能 |
英文关键词:Ti3SiC2 crystal structure preparation technology influence factors tribological property |
基金项目:国家自然科学基金(U1737112,U1533101);中国科学院兰州化学物理研究所固体润滑国家重点实验开放基金(LSL-1802);河南科技大学高端轴承摩擦学技术与应用国家地方联合工程实验室开放基金(201803);长沙市科技计划项目(kq1901134) |
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Author | Institution |
WANG Yang | 1.a.Hunan Province Key Laboratory of Materials Surface/Interface Science & Technology, b.Hunan Province Key Laboratory of Engineering Rheology, Central South University of Forestry & Technology, Changsha 410004, China |
LIU Xiu-bo | 1.a.Hunan Province Key Laboratory of Materials Surface/Interface Science & Technology, b.Hunan Province Key Laboratory of Engineering Rheology, Central South University of Forestry & Technology, Changsha 410004, China; 2. State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China |
OUYANG Chunsheng | 1.a.Hunan Province Key Laboratory of Materials Surface/Interface Science & Technology, b.Hunan Province Key Laboratory of Engineering Rheology, Central South University of Forestry & Technology, Changsha 410004, China |
LUO Ying-she | 1.a.Hunan Province Key Laboratory of Materials Surface/Interface Science & Technology, b.Hunan Province Key Laboratory of Engineering Rheology, Central South University of Forestry & Technology, Changsha 410004, China |
CHEN De-qiang | 3. National and Local United Engineering Laboratory for Advanced Bearing Tribology, Henan University of Science & Technology, Luoyang 471003, China |
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中文摘要: |
Ti3SiC2作为一种新型的陶瓷材料,兼具金属和陶瓷的双重性能,同时也由于具有良好的导电导热性、低密度、机械可加工性、优异的抗热震性能、高熔点、高热稳定性、耐高温氧化、耐腐蚀性能,近年来受到了越来越多研究者的关注。首先介绍了Ti3SiC2内部晶体学结构,指出其与二元碳化物TiC有着紧密的晶体学关系,接着详细叙述了各种Ti3SiC2制备工艺及其复合材料的研究现状,阐述了化学气相沉积(CVD)、磁控溅射(MS)、脉冲激光沉积(PLD)、自蔓延高温合成(SHS)、热等静压(HIP)、热压烧结(HP)、火花等离子烧结(SPS)等技术在制备Ti3SiC2及其复合材料方面的优点和不足。随后重点分析了温度、滑动速度、载荷、添加组分含量、对偶材料种类和润滑环境等因素对Ti3SiC2及其复合材料摩擦学性能的影响。最后总结了在Ti3SiC2及其复合材料研究中存在的一些问题,并指出进一步提高摩擦磨损性能,添加多元增强相,改进现有技术以及采取新型制备工艺,是未来发展的重要方向。 |
英文摘要: |
As a new type of ceramic material, Ti3SiC2 has the dual properties of metal and ceramic. In recent years, more and more researchers have paid attention to Ti3SiC2 due to its good electrical and thermal conductivity, low density, machinability, excellent thermal shock resistance, high melting point, high thermal stability, high temperature oxidation resistance and corrosion resistance. Firstly, the internal crystallographic structure of Ti3SiC2 was introduced and the close crystallographic relationship between it and binary carbide TiC was pointed out. Then, the research status of various preparation processes of Ti3SiC2 and its composites was described in detail, and the advantages and disadvantages of chemical vapor deposition (CVD), magnetron sputtering (MS), pulsed laser deposition (PLD), self-propagating high temperature synthesis (SHS), hot isostatic pressing (HIP), hot pressing sintering (HP), spark plasma sintering (SPS) and other technologies in preparing Ti3SiC2 and its composites were elaborated. Later, the effects of temperature, sliding speed, load, additive content, types of counterpart materials and lubrication environment on the tribological properties of Ti3SiC2 and its composites were analyzed emphatically. Finally, some problems existing in the research of Ti3SiC2 and its composites were summarized. It is proposed that further improvement of friction and wear properties, addition of multiple reinforcing phases, improvement of existing technologies and adoption of new preparation technologies are important directions for future development. |
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