熊礼威,崔晓慧,汪建华,龚国华,邹伟.硼源浓度对纳米金刚石薄膜掺硼的影响[J].表面技术,2014,43(3):6-9,24.
XIONG Li-wei,CUI Xiao-hui,WANG Jian-hua,GONG Guo-hua,ZOU Wei.Influence of Borane Concentration on the Boron-doping of Nano-crystalline Diamond Films[J].Surface Technology,2014,43(3):6-9,24 |
| 硼源浓度对纳米金刚石薄膜掺硼的影响 |
| Influence of Borane Concentration on the Boron-doping of Nano-crystalline Diamond Films |
| 投稿时间：2014-02-16 修订日期：2014-03-27 |
| DOI： |
| 中文关键词: 纳米金刚石薄膜 掺硼 硼源浓度 化学气相沉积 |
| 英文关键词:nano-crystalline diamond film doping boron boron concentration chemical vapor deposition |
| 基金项目:国家自然科学基金项目(11175137) ;湖北省教育厅科学技术研究项目( Q20121501) ;武汉工程大学科学研究基金(11111051) |
| 作者 | 单位 |
| 熊礼威 | 武汉工程大学 材料科学与工程学院, 武汉 430074;湖北省等离子体化学与新材料重点实验室, 武汉 430074 |
| 崔晓慧 | 武汉工程大学 材料科学与工程学院, 武汉 430074;湖北省等离子体化学与新材料重点实验室, 武汉 430074 |
| 汪建华 | 武汉工程大学 材料科学与工程学院, 武汉 430074;湖北省等离子体化学与新材料重点实验室, 武汉 430074 |
| 龚国华 | 武汉工程大学 材料科学与工程学院, 武汉 430074;湖北省等离子体化学与新材料重点实验室, 武汉 430074 |
| 邹伟 | 武汉工程大学 材料科学与工程学院, 武汉 430074;湖北省等离子体化学与新材料重点实验室, 武汉 430074 |
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| Author | Institution |
| XIONG Li-wei | School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China;Hubei Provincial Key Laboratory of Plasma Chemistry & Advanced Materials, Wuhan 430074, China |
| CUI Xiao-hui | School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China;Hubei Provincial Key Laboratory of Plasma Chemistry & Advanced Materials, Wuhan 430074, China |
| WANG Jian-hua | School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China;Hubei Provincial Key Laboratory of Plasma Chemistry & Advanced Materials, Wuhan 430074, China |
| GONG Guo-hua | School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China;Hubei Provincial Key Laboratory of Plasma Chemistry & Advanced Materials, Wuhan 430074, China |
| ZOU Wei | School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China;Hubei Provincial Key Laboratory of Plasma Chemistry & Advanced Materials, Wuhan 430074, China |
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| 中文摘要: |
| 目的 研究纳米金刚石薄膜生长掺硼的内在机理,实现对该过程的精确控制。 方法 采用微波等离子体化学气相沉积法,以氢气稀释的乙硼烷为硼源,进行纳米金刚石薄膜的生长过程掺硼实验,研究硼源浓度对掺硼纳米金刚石薄膜晶粒尺寸、表面粗糙度、表面电阻和表面硼原子浓度的影响。 结果 随着硼源浓度的增加,纳米金刚石薄膜的表面粗糙度和晶粒尺寸增大,表面电阻则先下降,而后趋于平衡。结论 纳米金刚石薄膜掺硼后,表面电导性能可获得改善,表面粗糙度和晶粒尺寸则会增大。 在 700 ℃条件下掺硼 15 min,最佳的硼源浓度( 以硼烷占总气体流量的百分比计) 为 0 . 02% 。 |
| 英文摘要: |
| Objective In order to study the intrinsic mechanism of doping borane during the growth of nano-crystalline diamond films to achieve precise control of the process. Methods Nano-crystalline diamond ( NCD) films were boron doped by the microwave plasma enhanced chemical vapor deposition ( MPCVD) method using hydrogen diluted di-borane as boron source. The influences of borane concentration on grain size, surface roughness, surface resistance and boron atom concentration of boron-doped NCD films were investigated. Results The surface roughness and grain size of nanocrystalline diamond films increased with increasing concentrations of boron source. The surface resistance first showed a downward trend with increasing boron concentrations, and then gradually reached equilibrium. Conclusion The results showed that doping of boron could improve the surface conductivity performance of nano-crystalline diamond films and increase its surface roughness and grain size. By comprehensive comparison, the optimal borane concentration was 0. 02% under the doping condition of 700 ℃ and 15 min. |
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