曹霖霖,郭路广,袁巨龙,张翔,吕冰海,马毅,杭伟,赵萍.晶体取向对蓝宝石晶片抛光加工的影响研究[J].表面技术,2021,50(11):339-345, 353.
CAO Lin-lin,GUO Lu-guang,YUAN Ju-long,ZHANG Xiang,LYU Bing-hai,MA Yi,HANG Wei,ZHAO Ping.Study on the Effect of Crystal Orientation on Polishing of Sapphire Wafer[J].Surface Technology,2021,50(11):339-345, 353 |
| 晶体取向对蓝宝石晶片抛光加工的影响研究 |
| Study on the Effect of Crystal Orientation on Polishing of Sapphire Wafer |
| 投稿时间：2021-02-04 修订日期：2021-04-07 |
| DOI：10.16490/j.cnki.issn.1001-3660.2021.11.036 |
| 中文关键词: 晶体取向 蓝宝石 抛光 表面粗糙度 材料去除率 |
| 英文关键词:crystal orientation sapphire polishing surface roughness material removal rate |
| 基金项目:国家自然科学基金(51575492，51775508，51805484);中国博士后科学基金(2017M621966) |
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| Author | Institution |
| CAO Lin-lin | Ultra-Precision Machining Centre, Hangzhou 310014, China |
| GUO Lu-guang | Ultra-Precision Machining Centre, Hangzhou 310014, China |
| YUAN Ju-long | Ultra-Precision Machining Centre, Hangzhou 310014, China |
| ZHANG Xiang | Ultra-Precision Machining Centre, Hangzhou 310014, China |
| LYU Bing-hai | Ultra-Precision Machining Centre, Hangzhou 310014, China |
| MA Yi | College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014, China |
| HANG Wei | Ultra-Precision Machining Centre, Hangzhou 310014, China |
| ZHAO Ping | Ultra-Precision Machining Centre, Hangzhou 310014, China |
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| 中文摘要: |
| 目的 对比分析不同晶向蓝宝石晶圆抛光结果，优化加工参数，探究晶体取向对抛光结果的影响规律。方法 选取A、C面蓝宝石晶片(50.8 mm)为研究对象，采用控制变量法，分别以加工载荷(9.87、14.81、19.75 kPa)和抛光盘转速(20、40、60、80 r/min)为变量，以表面粗糙度Ra和材料去除率MRR为评价指标，对两种晶体取向的蓝宝石晶片进行抛光加工试验，借助3D表面轮廓仪与扫描电子显微镜SEM，对加工前后蓝宝石晶片的表面形貌进行对比，并根据试验结果优化加工参数。结果 A、C面蓝宝石晶片的表面粗糙度与材料去除率，随时间均表现出先快速下降，然后逐渐变缓，最后趋于稳定的趋势。当选取转速60 r/min、载荷14.81 kPa的参数组合时，两种晶片获得目标最小粗糙度和最大材料去除率，最终得到A面Ra=24.874 nm，MRR=3.715 nm/min，C面Ra=2.763 nm，MRR=7.647 nm/min，C面材料去除率为A面的2.1~2.5倍。结论 蓝宝石晶体取向作用对材料加工结果存在显著影响，在相同的加工条件下，相较于A面蓝宝石，C面蓝宝石更容易获得纳米级的表面质量和更高的材料去除率，即C面更易加工。 |
| 英文摘要: |
| The aim of this paper is to compare and analyze the polishing results of sapphire wafers with different crystal orientations, optimize processing parameters, and explore the influence of crystal orientation on the polishing results. Sapphire wafers (50.8 mm) with A-plane and C-plane were selected as the research objects, and the controlled variable method was adopted. The processing load (9.87, 14.81, 19.75 kPa) and the polishing plate rotation speed (20, 40, 60, 80 r/min) were used as variables, respectively. Surface roughness Ra and material removal rate MRR were chosen as the evaluation indicators. The surface morphology of the sapphire wafers before and after polishing were tested The polishing experiments of sapphire wafers with two crystal orientations were carried out. The surface morphology of Sapphire Wafers before and after polishing was compared with the help of 3D surface profiler and scanning electron microscope SEM. The processing parameters were optimized according to the experiment results. The surface roughness and material removal rate of A-plane and C-plane sapphire wafers showed a rapid decline at first, gradually slowed down and finally tended to be stable. When the parameter combination of rotating speed 60 r/min and load 14.81 kPa is selected, the minimum roughness and maximum material removal rate of the two wafers are obtained, and the A-plane Ra= 24.874 nm and MRR = 3.715 nm/min are finally obtained; C-plane Ra=2.763 nm, MRR=7.647 nm/min, and the material removal rate of C-plane is 2.1~2.5 times that of A-plane. The crystal orientation of sapphire has a significant impact on the result of polishing. Moreover, under the same polishing conditions, compared to A-plane sapphire wafer, C-plane is easier to obtain nano-level surface quality and higher material removal rate. that is to say, C-plane sapphire wafers are easier to process. |
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