宿辉,王桂芳,栾风虎,胡胜鹏.(SiC)p表面低成本化学改性的研究[J].表面技术,2007,36(2):21-23.
XU Hui,WANG Gui fang,LUAN Feng-hu,HU Sheng-peng.Study on Low Cost Chemistry Modification on ( SiC) p[J].Surface Technology,2007,36(2):21-23
(SiC)p表面低成本化学改性的研究
Study on Low Cost Chemistry Modification on ( SiC) p
投稿时间:2006-10-27  修订日期:2007-04-10
DOI:
中文关键词:  ( SiC),  碳化硅复合粉体  表面改性  化学镀  热处理
英文关键词:( SiC)p  ( Ni/SiC)p  Surface modification  Electroless plating  Heat treatment
基金项目:黑龙江省科技攻关项目( GC06A208);学院优秀青年基金( Q06002);黑龙江省自然科学基金(E2004-20)
作者单位
宿辉 黑龙江工程学院材料与化学工程系,黑龙江哈尔滨150050 
王桂芳 哈尔滨工程大学材料科学与工程系,黑龙江哈尔滨150001 
栾风虎 哈尔滨工程大学材料科学与工程系,黑龙江哈尔滨150001 
胡胜鹏 黑龙江工程学院材料与化学工程系,黑龙江哈尔滨150050 
AuthorInstitution
XU Hui Department of Materials and Chemistry Engineering, Heilongjiang Engineering Institute, Harbin 150050, China 
WANG Gui fang Department of Materials Science and Engineering, Harbin Engineering University, Harbin 150001 , China 
LUAN Feng-hu Department of Materials Science and Engineering, Harbin Engineering University, Harbin 150001 , China 
HU Sheng-peng Department of Materials and Chemistry Engineering, Heilongjiang Engineering Institute, Harbin 150050, China 
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中文摘要:
      为解决裸(SiC)p在应用中存在的不足,提出(SiC)p表面低成本化学改性的思路。采用简单的化学镀技术,改进氧化、亲水、敏化和活化的前处理工艺,对(SiC)p进行表面化学改性。确定了最佳的试验工艺,获得了镀层连续、无光滑(SiC)p裸露的较高质量的碳化硅复合粉体[简写为( Ni/SiC)p],通过SEM、EDS、XRD、TEM等测试,结果表明:改性后的(Ni/SiC),较改性前的(SiC)p导电性有所提高,形貌、组成发生改变。同时分析了热处理对(Ni/SiC),的影响,结果表明:随着温度的升高,(Ni/SiC),表面改性层中的镍由非晶态转化为晶态。
英文摘要:
      For solving shortage of naked ( SiC)p in the application, the surface low cost chemistry modification on ( SiC) p was expound. The simple electroless plating improved the pre-treatments technology including oxidation, ge- ting close to water, sensitization and activation process. The continual, non-lubricous and high quality decoration of ( SiC)p( abbreviate as ( Ni/SiC)p) was obtained. Experiment results of SEM, EDS, XRD and TEM indicate that the e- lectric functions of ( Ni/SiC) p is much higher than those of unembellished ( SiC)p, and morphology and structure of ( Ni/SiC)p are changed. The effect of heat treatment on ( Ni/SiC)p was also analyzed. The result expresses that along with the temperature, the non-crystalline state nickel in surface modified layer on ( Ni/SiC) p becomes crystalline state nickel along with the going up of temperature.
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